兆馳半導體/希達/羅化芯/海目星等最新Micro LED專利一覽

　　近日，兆馳半導體、長(chang)春希達、羅化芯(xin)、海目星(xing)等(deng)公布Micro LED專利(li)，涉及(ji)外延結構及(ji)其(qi)制備方(fang)法(fa)、發光芯(xin)片測試方(fang)法(fa)、器件及(ji)其(qi)制備方(fang)法(fa)、修復方(fang)法(fa)與修復設備等(deng)技術環節。

　　兆馳半導體：一種高空穴注入效率Micro-LED外延結構及其制備方法

 　　江西(xi)兆(zhao)馳半導(dao)體有限公(gong)司申請(qing)一(yi)項名為“一(yi)種(zhong)高空穴注(zhu)入效率Micro-LED外延結(jie)構及其制備方法”的發明專(zhuan)利，申請(qing)公(gong)布(bu)號為CN118899378A，申請(qing)公(gong)布(bu)日為2024月11月5日。

　　圖片來源：國(guo)家知識產權局

　　專利摘要 ：本(ben)發(fa)明公開了一種高空(kong)(kong)(kong)穴(xue)注入(ru)效率MicroLED外延結(jie)構(gou)及其制備方法，涉及半(ban)導(dao)體技術領域。本(ben)發(fa)明的(de)MicroLED外延結(jie)構(gou)包括(kuo)多量子阱發(fa)光層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)、多階P型(xing)空(kong)(kong)(kong)穴(xue)注入(ru)增(zeng)(zeng)強(qiang)(qiang)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)和(he)P型(xing)半(ban)導(dao)體層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng);多階P型(xing)空(kong)(kong)(kong)穴(xue)注入(ru)增(zeng)(zeng)強(qiang)(qiang)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)包括(kuo)第一階空(kong)(kong)(kong)穴(xue)注入(ru)增(zeng)(zeng)強(qiang)(qiang)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)、第二(er)階空(kong)(kong)(kong)穴(xue)注入(ru)增(zeng)(zeng)強(qiang)(qiang)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)和(he)第三(san)階空(kong)(kong)(kong)穴(xue)注入(ru)增(zeng)(zeng)強(qiang)(qiang)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng);第一階空(kong)(kong)(kong)穴(xue)注入(ru)增(zeng)(zeng)強(qiang)(qiang)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)包括(kuo)第一AlGaN層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)和(he)第一InGaN層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng);第二(er)階空(kong)(kong)(kong)穴(xue)注入(ru)增(zeng)(zeng)強(qiang)(qiang)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)包括(kuo)第二(er)AlGaN層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)和(he)第二(er)InGaN層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)，第二(er)InGaN層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)中摻雜(za)有Mg;第三(san)階空(kong)(kong)(kong)穴(xue)注入(ru)增(zeng)(zeng)強(qiang)(qiang)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)包括(kuo)第三(san)AlGaN層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)、第三(san)InGaN層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)和(he)第四(si)InGaN層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)，第三(san)InGaN層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)和(he)第四(si)InGaN層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)中分(fen)別摻雜(za)有Mg。

　　本發明(ming)高空穴注(zhu)入效率的(de)MicroLED外延結構，可(ke)顯著提(ti)高P型半導體層的(de)空穴注(zhu)入效率并改善多量(liang)子(zi)阱發光層區域電(dian)子(zi)空穴濃度的(de)匹配(pei)度，從(cong)而提(ti)高MicroLED芯片(pian)在(zai)低(di)工(gong)作電(dian)流(liu)密度下的(de)光效。

　　兆馳半導體：用于Micro-LED的外延結構及其制備方法

　　江(jiang)西兆(zhao)馳半導體有限公(gong)司申請(qing)一項名為“用于Micro-LED的外(wai)延結構及其制備方法”的發明專利，申請(qing)公(gong)布(bu)號為CN118888657A，申請(qing)公(gong)布(bu)日為2024月11月1日。

　　圖片來源：國家知識(shi)產權局

　　專利摘要 ：本(ben)發(fa)明(ming)公開了一種用于MicroLED的外延(yan)結構及(ji)其制備方法、Micro LED，涉及(ji)半導體光電(dian)(dian)器件(jian)領域。其中，外延(yan)結構依(yi)次包(bao)括(kuo)襯(chen)底、緩(huan)沖層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)、非摻雜GaN層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)、N型GaN層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)、多(duo)量(liang)(liang)子(zi)阱層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)、空穴(xue)(xue)輸(shu)運層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)和P型GaN層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng);多(duo)量(liang)(liang)子(zi)阱層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)包(bao)括(kuo)交替層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)疊(die)(die)的量(liang)(liang)子(zi)阱層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)和量(liang)(liang)子(zi)壘層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng);所述(shu)(shu)(shu)量(liang)(liang)子(zi)阱層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)為InxGa1xN層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)，所述(shu)(shu)(shu)量(liang)(liang)子(zi)壘層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)包(bao)括(kuo)依(yi)次層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)疊(die)(die)的InyGa1yN層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)、AlzGa1zN層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)和BwGa1wN層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng);x>y;所述(shu)(shu)(shu)量(liang)(liang)子(zi)壘層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)的厚(hou)度<10nm;所述(shu)(shu)(shu)空穴(xue)(xue)輸(shu)運層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)包(bao)括(kuo)依(yi)次層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)疊(die)(die)的AlαGa1αN層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)、BβGa1βN層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)和AlN層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng);w>α>β。實(shi)施本(ben)發(fa)明(ming)，可提(ti)(ti)升MicroLED在(zai)低電(dian)(dian)流密度下的光效(xiao)，提(ti)(ti)升其顯示效(xiao)果(guo)。

　　長春希達：一種Micro-LED發光芯片測試方法

　　長春希(xi)達電子技術有限公司申(shen)請一(yi)項名為(wei)“一(yi)種Micro-LED發光芯片測(ce)試方法”的發明(ming)專(zhuan)利，申(shen)請公布號為(wei)CN118884188A，申(shen)請公布日為(wei)2024月11月1日。

　　圖(tu)片來源：國家知識產權局

　　專利摘要 ：一(yi)種(zhong)MicroLED發(fa)光芯(xin)片測(ce)試方(fang)(fang)法，涉(she)及MicroLED顯(xian)示技術(shu)領域(yu)，解決現有采(cai)用TFT的AM驅動技術(shu)驅動MicroLED顯(xian)示器時，由于(yu)(yu)TFT和LED的性能(neng)差(cha)異會造(zao)成紅(hong)(hong)綠(lv)(lv)藍(lan)LED亮(liang)度(du)(du)匹配不(bu)均造(zao)成灰度(du)(du)過(guo)(guo)度(du)(du)不(bu)均勻(yun)以(yi)及亮(liang)度(du)(du)不(bu)均勻(yun)性的問題。方(fang)(fang)法通(tong)(tong)過(guo)(guo)基于(yu)(yu)PCB基板(ban)設(she)計(ji)MicroLED測(ce)試陣(zhen)(zhen)列模組，陣(zhen)(zhen)列內部采(cai)用并聯方(fang)(fang)式(shi)(shi)將(jiang)LED陣(zhen)(zhen)列連(lian)接(jie)，外部采(cai)用電壓源直接(jie)驅動方(fang)(fang)式(shi)(shi)保(bao)證加載到每顆LED上的電壓是(shi)一(yi)致的。通(tong)(tong)過(guo)(guo)測(ce)試紅(hong)(hong)綠(lv)(lv)藍(lan)三(san)基色MicroLED陣(zhen)(zhen)列模組從0灰階(jie)到255灰階(jie)的數據電壓計(ji)算(suan)得(de)紅(hong)(hong)綠(lv)(lv)藍(lan)模組最(zui)小(xiao)灰階(jie)電壓的公約數以(yi)及MicroLED白(bai)場最(zui)小(xiao)的灰階(jie)等級。本發(fa)明適用于(yu)(yu)MicroLED顯(xian)示領域(yu)。

　　第三代半導體研究院：Micro-LED器件及其制備方法

　　江蘇第三代半導體研(yan)究院有限公司申(shen)請(qing)一項名為“Micro-LED器件及其制備方法”的發明專利，申(shen)請(qing)公布(bu)號為CN118867068A，申(shen)請(qing)公布(bu)日為2024月(yue)10月(yue)29日。

　　圖片來(lai)源：國(guo)家(jia)知識產(chan)權局

　　專利摘要 ：本發(fa)明(ming)公開(kai)一(yi)(yi)(yi)種(zhong)MicroLED器件及其制備方法，該方法包括(kuo)在(zai)(zai)襯底上(shang)依(yi)次形(xing)(xing)(xing)成(cheng)(cheng)(cheng)層(ceng)疊(die)的(de)(de)(de)N型層(ceng)、第(di)(di)(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)發(fa)光(guang)結構(gou)和(he)第(di)(di)(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)介質(zhi)層(ceng);去除(chu)上(shang)述膜層(ceng)的(de)(de)(de)一(yi)(yi)(yi)部分(fen)，形(xing)(xing)(xing)成(cheng)(cheng)(cheng)間隔分(fen)布的(de)(de)(de)第(di)(di)(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)凸起(qi)、第(di)(di)(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)凹槽(cao)(cao)(cao)、第(di)(di)(di)(di)(di)(di)(di)(di)二(er)凸起(qi)、第(di)(di)(di)(di)(di)(di)(di)(di)二(er)凹槽(cao)(cao)(cao)和(he)第(di)(di)(di)(di)(di)(di)(di)(di)三(san)(san)凸起(qi);在(zai)(zai)第(di)(di)(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)凹槽(cao)(cao)(cao)和(he)第(di)(di)(di)(di)(di)(di)(di)(di)二(er)凹槽(cao)(cao)(cao)形(xing)(xing)(xing)成(cheng)(cheng)(cheng)第(di)(di)(di)(di)(di)(di)(di)(di)二(er)介質(zhi)層(ceng);去除(chu)至少部分(fen)第(di)(di)(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)介質(zhi)層(ceng)和(he)部分(fen)第(di)(di)(di)(di)(di)(di)(di)(di)二(er)介質(zhi)層(ceng)、露出第(di)(di)(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)發(fa)光(guang)結構(gou)并形(xing)(xing)(xing)成(cheng)(cheng)(cheng)第(di)(di)(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)孔，并形(xing)(xing)(xing)成(cheng)(cheng)(cheng)第(di)(di)(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)P電(dian)(dian)(dian)極(ji);去除(chu)第(di)(di)(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)凹槽(cao)(cao)(cao)上(shang)的(de)(de)(de)第(di)(di)(di)(di)(di)(di)(di)(di)二(er)介質(zhi)層(ceng)，在(zai)(zai)第(di)(di)(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)凹槽(cao)(cao)(cao)槽(cao)(cao)(cao)底依(yi)次形(xing)(xing)(xing)成(cheng)(cheng)(cheng)第(di)(di)(di)(di)(di)(di)(di)(di)二(er)發(fa)光(guang)結構(gou)和(he)第(di)(di)(di)(di)(di)(di)(di)(di)二(er)P電(dian)(dian)(dian)極(ji);去除(chu)第(di)(di)(di)(di)(di)(di)(di)(di)二(er)凹槽(cao)(cao)(cao)上(shang)的(de)(de)(de)第(di)(di)(di)(di)(di)(di)(di)(di)二(er)介質(zhi)層(ceng)，并形(xing)(xing)(xing)成(cheng)(cheng)(cheng)第(di)(di)(di)(di)(di)(di)(di)(di)三(san)(san)發(fa)光(guang)結構(gou)和(he)第(di)(di)(di)(di)(di)(di)(di)(di)三(san)(san)P電(dian)(dian)(dian)極(ji);去除(chu)第(di)(di)(di)(di)(di)(di)(di)(di)三(san)(san)凸起(qi)、第(di)(di)(di)(di)(di)(di)(di)(di)三(san)(san)凸起(qi)表面的(de)(de)(de)第(di)(di)(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)介質(zhi)層(ceng)和(he)第(di)(di)(di)(di)(di)(di)(di)(di)二(er)介質(zhi)層(ceng)，露出N型層(ceng)并N電(dian)(dian)(dian)極(ji)。采用(yong)該方案，保(bao)證色(se)彩的(de)(de)(de)純(chun)凈度(du)和(he)亮(liang)度(du)均(jun)勻性，改善發(fa)光(guang)效率低(di)下和(he)顏色(se)一(yi)(yi)(yi)致(zhi)性差的(de)(de)(de)問題(ti)。

　　江蘇第(di)(di)三(san)(san)代半(ban)(ban)導(dao)(dao)體研究(jiu)院有限公司(si)(以(yi)下簡稱研究(jiu)院)于2019年7月注冊于蘇州工業(ye)園區，是(shi)以(yi)市場化(hua)機(ji)制運行的(de)新型研發機(ji)構。研究(jiu)院以(yi)培(pei)育發展(zhan)第(di)(di)三(san)(san)代半(ban)(ban)導(dao)(dao)體技術應(ying)用產(chan)業(ye)為目標，聚焦第(di)(di)三(san)(san)代半(ban)(ban)導(dao)(dao)體在新型顯示、5G 通信、電力電子(zi)、環(huan)境與健康等領域的(de)應(ying)用。

　　海目星：Micro-LED修復方法與修復設備

　　海目星激光科(ke)技(ji)集團股份有限公司申請(qing)一項名為“Micro-LED修(xiu)(xiu)復方(fang)法(fa)與修(xiu)(xiu)復設備”的發明專(zhuan)利，申請(qing)公布號為N118848253A，申請(qing)公布日為2024月10月29日。

　　圖片來(lai)源(yuan)：國家(jia)知識產權局

　　專利摘要 ：本發明公開了一種MicroLED修復(fu)(fu)方(fang)法與修復(fu)(fu)設備(bei)，修復(fu)(fu)設備(bei)包括支(zhi)撐架、激(ji)(ji)(ji)光加(jia)(jia)工(gong)組(zu)(zu)(zu)(zu)裝(zhuang)置、物(wu)(wu)(wu)鏡(jing)(jing)組(zu)(zu)(zu)(zu)件(jian)(jian)、Z軸(zhou)模組(zu)(zu)(zu)(zu)和T軸(zhou)模組(zu)(zu)(zu)(zu)，所(suo)(suo)(suo)(suo)述物(wu)(wu)(wu)鏡(jing)(jing)組(zu)(zu)(zu)(zu)件(jian)(jian)沿T軸(zhou)方(fang)向(xiang)滑(hua)動(dong)連接于所(suo)(suo)(suo)(suo)述支(zhi)撐架上，所(suo)(suo)(suo)(suo)述T軸(zhou)模組(zu)(zu)(zu)(zu)用(yong)于驅動(dong)所(suo)(suo)(suo)(suo)述物(wu)(wu)(wu)鏡(jing)(jing)組(zu)(zu)(zu)(zu)件(jian)(jian)移動(dong)，以(yi)使物(wu)(wu)(wu)鏡(jing)(jing)組(zu)(zu)(zu)(zu)件(jian)(jian)中不同(tong)(tong)(tong)倍率的(de)物(wu)(wu)(wu)鏡(jing)(jing)移動(dong)至激(ji)(ji)(ji)光加(jia)(jia)工(gong)組(zu)(zu)(zu)(zu)裝(zhuang)置射出激(ji)(ji)(ji)光的(de)同(tong)(tong)(tong)軸(zhou)位置，所(suo)(suo)(suo)(suo)述激(ji)(ji)(ji)光加(jia)(jia)工(gong)組(zu)(zu)(zu)(zu)裝(zhuang)置沿Z軸(zhou)方(fang)向(xiang)滑(hua)動(dong)連接于所(suo)(suo)(suo)(suo)述支(zhi)撐架上，所(suo)(suo)(suo)(suo)述Z軸(zhou)模組(zu)(zu)(zu)(zu)用(yong)于驅動(dong)所(suo)(suo)(suo)(suo)述支(zhi)撐架移動(dong)，以(yi)調節所(suo)(suo)(suo)(suo)述物(wu)(wu)(wu)鏡(jing)(jing)組(zu)(zu)(zu)(zu)件(jian)(jian)在Z軸(zhou)方(fang)向(xiang)的(de)位置;修復(fu)(fu)方(fang)法采用(yong)上述修復(fu)(fu)設備(bei)實現MicroLED的(de)修復(fu)(fu)。本發明通過不同(tong)(tong)(tong)倍率物(wu)(wu)(wu)鏡(jing)(jing)的(de)選擇(ze)以(yi)及物(wu)(wu)(wu)鏡(jing)(jing)高度的(de)調節來自(zi)動(dong)追(zhui)焦(jiao)，從(cong)而提(ti)高加(jia)(jia)工(gong)的(de)精度，同(tong)(tong)(tong)時提(ti)高加(jia)(jia)工(gong)效率。

　　羅化芯：一種多Micro-LED芯片封裝體及其制備方法

　　羅(luo)化芯(xin)顯示科(ke)技(ji)開發(fa)(江蘇)有限公司申請(qing)(qing)一項(xiang)名(ming)為(wei)&ldquo;一種多Micro-LED芯(xin)片(pian)封裝體及其制備方法”的發(fa)明(ming)專利，申請(qing)(qing)公布號為(wei)CN118867073A，申請(qing)(qing)公布日為(wei)2024月10月29日。

　　圖(tu)片來源：國家知識(shi)產權(quan)局(ju)

　　專利摘要：本發明(ming)涉及(ji)一種多MicroLED芯(xin)片(pian)封(feng)裝體及(ji)其制備(bei)方法(fa)，涉及(ji)半導體顯示技術領域(yu)。在本發明(ming)的(de)多MicroLED芯(xin)片(pian)封(feng)裝體的(de)制備(bei)方法(fa)中(zhong)，通(tong)過(guo)優化(hua)(hua)第(di)(di)(di)(di)一氧(yang)(yang)化(hua)(hua)鋯(gao)(gao)鈍(dun)化(hua)(hua)層(ceng)、第(di)(di)(di)(di)二(er)氧(yang)(yang)化(hua)(hua)鋯(gao)(gao)鈍(dun)化(hua)(hua)層(ceng)以(yi)(yi)及(ji)第(di)(di)(di)(di)三氧(yang)(yang)化(hua)(hua)鋯(gao)(gao)鈍(dun)化(hua)(hua)層(ceng)的(de)制備(bei)工藝，使(shi)(shi)得各(ge)氧(yang)(yang)化(hua)(hua)鋯(gao)(gao)鈍(dun)化(hua)(hua)層(ceng)的(de)表(biao)面為粗(cu)糙結(jie)構，進而(er)在后續形成各(ge)金(jin)屬(shu)層(ceng)時(shi)，可(ke)以(yi)(yi)有(you)(you)效(xiao)提高二(er)者的(de)結(jie)合性能，進而(er)可(ke)以(yi)(yi)有(you)(you)效(xiao)避免各(ge)金(jin)屬(shu)層(ceng)剝離，且通(tong)過(guo)形成第(di)(di)(di)(di)一金(jin)屬(shu)層(ceng)、第(di)(di)(di)(di)二(er)金(jin)屬(shu)層(ceng)以(yi)(yi)及(ji)第(di)(di)(di)(di)三金(jin)屬(shu)層(ceng)，為各(ge)MicroLED芯(xin)片(pian)與第(di)(di)(di)(di)二(er)電(dian)極之間提供(gong)多條導電(dian)通(tong)路，在后續的(de)使(shi)(shi)用(yong)過(guo)程(cheng)中(zhong)，即(ji)使(shi)(shi)某一個(ge)導電(dian)通(tong)路發生斷路，這也不(bu)妨礙各(ge)MicroLED芯(xin)片(pian)的(de)正常使(shi)(shi)用(yong)。

　　羅化芯：一種Micro-LED顯示面板及其形成方法

　　羅化芯顯示科技(ji)開發(江蘇)有限公(gong)(gong)司申請(qing)一項名為(wei)“一種Micro-LED顯示面板及其形(xing)成(cheng)方(fang)法”的(de)發明(ming)專(zhuan)利，申請(qing)公(gong)(gong)布(bu)號為(wei)CN118867074A，申請(qing)公(gong)(gong)布(bu)日(ri)為(wei)2024月(yue)10月(yue)29日(ri)。

　　圖片來源：國家知識產(chan)權局

　　專利摘要 ：本發明(ming)涉(she)及(ji)一種MicroLED顯(xian)示面板及(ji)其形成(cheng)方法，涉(she)及(ji)半導體顯(xian)示技術領域。在(zai)本發明(ming)的(de)MicroLED顯(xian)示面板的(de)形成(cheng)方法中，通過(guo)在(zai)第(di)二半導體層(ceng)(ceng)上(shang)形成(cheng)第(di)一透(tou)(tou)明(ming)導電(dian)層(ceng)(ceng)，并對所(suo)述(shu)第(di)一透(tou)(tou)明(ming)導電(dian)層(ceng)(ceng)進行(xing)圖案化處理，以(yi)(yi)形成(cheng)多個平行(xing)排列的(de)條(tiao)形透(tou)(tou)明(ming)導電(dian)凸塊(kuai)，接(jie)著形成(cheng)第(di)二透(tou)(tou)明(ming)導電(dian)層(ceng)(ceng)，且設置第(di)一透(tou)(tou)明(ming)導電(dian)層(ceng)(ceng)為鎂和氟共摻雜的(de)氧化錫，第(di)二透(tou)(tou)明(ming)導電(dian)層(ceng)(ceng)為氧化銦錫，通過(guo)上(shang)述(shu)設置，可以(yi)(yi)大(da)大(da)提高電(dian)流的(de)擴散性(xing)能，進而(er)可以(yi)(yi)提高MicroLED單元(yuan)的(de)發光性(xing)能。

　　求是高等研究院：Micro-LED顯示芯片制備方法及Micro-LED顯示芯片

　　江西求是高等研究(jiu)院申(shen)請(qing)(qing)一項名(ming)為(wei)(wei)“Micro-LED顯示(shi)芯片制備方法及Micro-LED顯示(shi)芯片”的發明專利，申(shen)請(qing)(qing)公(gong)布號為(wei)(wei)CN118825173A，申(shen)請(qing)(qing)公(gong)布日(ri)為(wei)(wei)2024月10月21日(ri)。

　　圖片來(lai)源：國家(jia)知識產(chan)權(quan)局

　　專利摘要 ：本(ben)發明(ming)提供了一種MicroLED顯示(shi)芯片(pian)制備(bei)方(fang)法及(ji)MicroLED顯示(shi)芯片(pian)，制備(bei)方(fang)法包括：在(zai)生長(chang)襯底上沉(chen)積(ji)GaN外延(yan)層(ceng)(ceng)(ceng)和第一鍵(jian)合(he)金(jin)屬層(ceng)(ceng)(ceng);在(zai)驅(qu)動電路(lu)基板表(biao)面(mian)(mian)(mian)沉(chen)積(ji)第二鍵(jian)合(he)金(jin)屬層(ceng)(ceng)(ceng)后與第一鍵(jian)合(he)金(jin)屬層(ceng)(ceng)(ceng)鍵(jian)合(he);去除(chu)生長(chang)襯底及(ji)部分GaN外延(yan)層(ceng)(ceng)(ceng)后進行光(guang)(guang)刻和刻蝕，以形成若干相互獨(du)立的MicroLED單元;沉(chen)積(ji)鈍化層(ceng)(ceng)(ceng)和N電極(ji)層(ceng)(ceng)(ceng)，得到若干獨(du)立的發光(guang)(guang)臺面(mian)(mian)(mian);在(zai)相鄰(lin)的兩發光(guang)(guang)臺面(mian)(mian)(mian)之(zhi)間沉(chen)積(ji)環形的金(jin)屬電極(ji)，在(zai)金(jin)屬電極(ji)與發光(guang)(guang)臺面(mian)(mian)(mian)之(zhi)間填充含(han)有量子點和納米熒(ying)光(guang)(guang)粉的粘(zhan)性(xing)光(guang)(guang)學涂(tu)層(ceng)(ceng)(ceng);制備(bei)微透鏡陣(zhen)列后貼合(he)在(zai)粘(zhan)性(xing)光(guang)(guang)學涂(tu)層(ceng)(ceng)(ceng)上，以得到目標(biao)MicroLED顯示(shi)芯片(pian)。本(ben)申請的MicroLED顯示(shi)芯片(pian)為全彩顯示(shi)芯片(pian)，發光(guang)(guang)亮度強(qiang)、效率高。